Cut a) and top view b) of the structure of an MPS-Diode. In b) Black:... | Download Scientific Diagram
4.4.3.2 MPS Diode Simulation
Materials | Free Full-Text | The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes
![2 -a) Structure of MPS diode (source: modified from [15]), b) DMOSFET... | Download Scientific Diagram](https://www.researchgate.net/publication/338632875/figure/fig3/AS:848021285777409@1579195438122/2-a-Structure-of-MPS-diode-source-modified-from-15-b-DMOSFET-source-modified.png "2 -a) Structure of MPS diode (source: modified from [15]), b) DMOSFET... | Download Scientific Diagram")
2 -a) Structure of MPS diode (source: modified from [15]), b) DMOSFET... | Download Scientific Diagram
a) Electrostatic potential distribution inside the MPS diode at low... | Download Scientific Diagram
Design and Optimization of Silicon Carbide Schottky Diodes - Power Electronics News
Figure 1 from Silicon carbide pinched barrier rectifier (PBR) | Semantic Scholar
4.4.3.1 MPS Diode Structure
Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser
SiC JBS/ MPS Diode I-V Operation
Improved JBS structure to reduce the leakage current and increase the surge current capability | 臺灣東芝電子零組件股份有限公司 | 台灣
Basic unit cell of a MPS diode | Download Scientific Diagram
Junction barrier Schottky diode (JBS) and merged PiN Schottky diode... | Download Scientific Diagram
The Wolfspeed MPS Diode Advantage - YouTube
The Wolfspeed MPS Diode Advantage - YouTube
MPS (Merged p-i-n/Schottky) Diode
Avalanche Ruggedness of SiC MPS Diodes Under Repetitive Unclamped-Inductive-Switching Stress - Technical Articles
Improved JBS structure to reduce the leakage current and increase the surge current capability | 臺灣東芝電子零組件股份有限公司 | 台灣
Silicon Carbide (SiC) Schottky Diodes - Wolfspeed | Mouser
Advantages of the 1200 V SiC Schottky Diode with MPS Design - Technical Articles
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1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability
Figure 2 from Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation | Semantic Scholar
1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability
